MRS Proceedings
- MRS Proceedings / Volume 483 / 1997
- Copyright © Materials Research Society 1998
- DOI: http://dx.doi.org/10.1557/PROC-483-405 (About DOI)
Table of Contents - Volume 483 - Symposium E – Power Semiconductor Materials & Devices
Editors : S.J. Pearton, F. Ren, R.J. Shul, S. Tenconi, E. Wolfgang
Articles
Uniformity, High Temperature Performance And Reliability Of X-Band Nitride Power Hemts Fabricated From 2-Inch Epitaxy
1997 MRS Fall Meeting.
R. Hickmana1, J. M. Van Hovea1, P. P. Chowa1, J. J. Klaassena1, A. M. Wowchacka1 and C. J. Polleya1
a1 SVT Associates, 7620 Executive Dr., Eden Prairie, MN 55344, rhickman@svta.com
Abstract
X-band performance, high temperature DC operation, and uniformity have been evaluated for 1 μm gate AlGaN/GaN HEMTs grown by RF atomic nitrogen plasma MBE. Deposition and fabrication were performed on 2-inch (0001) saphirre substrates to determine process uniformity. HEMTs with 300 μm total gate width and dual gate finger geometry have been fabricated with 650–700 cm2/V s mobility. Maximum frequency cut-offs on the order of of 8–10 were achieved. DC performance at room temperature was >500 mA/mm, and external transconductance was >70mS/mn. The transistors operated at test temperatures of 425°C.
