MRS Proceedings
- MRS Proceedings / Volume 483 / 1997
- Copyright © Materials Research Society 1998
- DOI: http://dx.doi.org/10.1557/PROC-483-45 (About DOI)
Table of Contents - Volume 483 - Symposium E – Power Semiconductor Materials & Devices
Editors : S.J. Pearton, F. Ren, R.J. Shul, S. Tenconi, E. Wolfgang
Articles
Localized Lifetime Control In Silicon Bipolar Power Devices By Voids Induced By He Ion Implantation
1997 MRS Fall Meeting.
M. Saggioa1, V. Raineria2, F. Frisinaa1 and E. Riminia3
a1 ST Microelectronics, stradale Primosole 50, I-95121 Catania, Italy, mario.saggio@st.com
a2 CNR – IMETER, Stradale Primosole 50, I-95121 Catania, Italy
a3 INFM and Dipartimento di Fisica, Corso Italia 57, 1–95121 Catania, Italy
Abstract
Localized lifetime control in silicon bipolar devices is presented and discussed. It was achieved by formation of a void layer by He ion implantation. The void formation is reviewed and the void properties are described and carefully considered. Simulations demonstrate the advantages of using localized lifetime control, while the innovative method is applied to fabrication of high speed Insulated Gate Bipolar Transistors.
