MRS Proceedings
- MRS Proceedings / Volume 616 / 2000
- Copyright © Materials Research Society 2000
- DOI: http://dx.doi.org/10.1557/PROC-616-227 (About DOI)
Table of Contents - Volume 616 - Symposium I – New Methods, Mechanisms & Models of Vapor Deposition
Editors : W. Barker, G. Gilmer, H.N.G. Wadley
Articles
Modeling of PVT Growth of Bulk SiC Crystals: General Trends and 2” to 4” Reactor Scaling
2000 MRS Spring Meeting.
M.S. Ramma4, A.V. Kulika2, I.A. Zhmakina2, S.Yu. Karpova2, O.V. Borda1, S.E. Deminaa2 and Yu.N. Makarova3
a1 A.F. loffe Physical-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, 194021, St.Petersburg, Russia
a2 Soft-Impact Ltd., P.O.Box 33, 194156, St.Petersburg, Russia
a3 Fluid Mechanics Institute, University of Erlangen-Ntirnberg, Cauerstrasse 4, D-91058 Erlangen, Germany
a4 A.F. loffe Physical-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, 194021, St.Petersburg, Russia, ramm@softimpact.fi.ru
Abstract
We report on study of a growth system upscaling from 2” to 4” using numerical modeling. The model applied involves heat and mass transfer computations combined with a self-consistent analysis of deposit formation on the reactor walls. General trends in SiC bulk crystal growth originated from upscaling are discussed in detail.
